EUV lithography reaches volume production
2019TSMC's 7nm+ became the first high-volume node using ASML's extreme-ultraviolet machines — the tool that unlocked everything below 7nm.
Who leads the race to the smallest, densest chips?
The single most intuitive view — current position against the end goal, on a log scale.
Standings by actor, within this field only.
Clear-cut events: crossed or not crossed.
TSMC's 7nm+ became the first high-volume node using ASML's extreme-ultraviolet machines — the tool that unlocked everything below 7nm.
Samsung's 3nm was the first to ship GAA transistors, the architecture now succeeding FinFET at the frontier.
High-bandwidth memory became the other scarce frontier part, with SK hynix leading supply for AI GPUs.
All three leaders entered 2nm-class volume in 2025 (TSMC N2 in Q4); demand outstrips supply, with long foundry waitlists.
Intel's 18A brought PowerVia backside power to a volume node — a structural change rivals are still adopting.
The next frontier (TSMC A14, Intel 14A, Samsung SF1.4), with High-NA EUV — targeted around 2028, not yet here.
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