EUV lithography reaches volume production
2019TSMC's 7nm+ became the first high-volume node using ASML's extreme-ultraviolet machines — the tool that unlocked everything below 7nm.
Who leads the race to the smallest, densest chips?
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TSMC's 7nm+ became the first high-volume node using ASML's extreme-ultraviolet machines — the tool that unlocked everything below 7nm.
Samsung's 3nm was the first to ship GAA transistors, the architecture now succeeding FinFET at the frontier.
High-bandwidth memory became the other scarce frontier part, with SK hynix leading supply for AI GPUs.
All three leaders entered 2nm-class volume in 2025 (TSMC N2 in Q4); demand outstrips supply, with long foundry waitlists.
IBM demonstrated the world's first sub-1nm (0.7nm / 7Å "nanostack") logic transistor architecture, experimentally validated at the 2026 VLSI Symposium with functional CMOS inverters and ~100B transistors on a fingernail-sized die. A research milestone — not a product: IBM is still scaling 2nm and sees production as early as ~5 years out. (Aggregator coverage conflated this with the separate 'Anderon' quantum-chip foundry plan.)
Intel's 18A brought PowerVia backside power to a volume node — a structural change rivals are still adopting.
President Trump said (on Truth Social, 18 Jun 2026) that Apple has agreed to work with Intel on US chip design and manufacturing — sending Intel up ~9%. It follows a WSJ report of a preliminary deal after a year of talks, with Intel likely starting on simpler M-series parts before iPhone silicon, helping Apple diversify from TSMC. Neither company has confirmed scope, timing or structure — so this remains unconfirmed.
The next frontier (TSMC A14, Intel 14A, Samsung SF1.4), with High-NA EUV — targeted around 2028, not yet here.
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